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            AW3112DNR

            30V/3A PNP Low V CESAT BJT, Integrated with 20V Trench NMOSFET

            The AW3112 is 30V PNP power bipolar transistor using epitaxial planar technology, integrating with a 20V trench NMOSFET as a switch transistor of base. The AW3112 has low V CESAT and high current gain. It is suitable for linear regulator in battery charging application. AW3112 is available in DFN2mm×2mm-6L package. It is specified among the industrial temperature range of -40℃ and +150℃.

            產品特性

            l  Low collector-emitter saturation voltage

            l  Large current capability

            l  High current gain

            l  DFN2mm×2mm-6L Package

            l  ROHS compliant

            Datasheet

            Application note

            產品型號 文檔格式 大小 下載
            AW3112DNR PDF 1M
            • Control Interface
              Operation Mode
              Max Charge Current (A)
              VOREG
              OTG
              Package (mm)
            封裝形式 引腳數 長(mm) 寬(mm) 厚(mm) 引腳間距(mm) 散熱盤 文檔下載
            DFN 2.0×2.0×0.75 -6L(B) 6 2.0 2.0 0.75 0.65 Y
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            国产疯狂女同互磨高潮在线看
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